Cover of: Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition | Mohammad Mehdi Yazdanian

Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition

  • 86 Pages
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by
Brock University, Dept. of Physics , St. Catharines, Ont
Thin films., Pulsed laser deposi
Statementby Mohammad Mehdi Yazdanian.
Classifications
LC ClassificationsZ9999.P58 Y39 2004
The Physical Object
Paginationxi, 86 leaves :
ID Numbers
Open LibraryOL23367409M

SrRuO 3 thin-films were deposited with different pulse repetition rates, f dep, epitaxially on vicinal SrTiO 3 substrates by means of pulsed laser deposition.

The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature) consistently reveals that an Cited by: 9. However, current preparation methods of Sb 2 (S x Se 1−x) 3 suffer from low-quality films, which hampers the performance improvement in Sb 2 (S x Se 1−x) 3-based solar cells.

Herein, we develop a pulsed laser deposition technique to fabricate antimony selenosulfide films with flat and compact surface morphology and high : Chao Chen, Yiwei Yin, Weitao Lian, Lifeng Jiang, Rongfeng Tang, Chenhui Jiang, Chunyan Wu, Di Gao, X.

This site uses cookies. By continuing to use this site you agree to our use of cookies. To find out more, see our Privacy and Cookies by:   The preparation in inert gas atmosphere makes it even possible to tune the film properties (stress, texture, reflectivity, magnetic properties ) by varying the kinetic energy of the deposited particles.

All this makes PLD an alternative deposition technique for the growth of high-quality thin films. Thin films of Sr 2 FeMoO 6 grown by pulsed laser deposition: preparation and characterization J. Santiso Institut de Ciència de Materials de Barcelona (CSIC), Campus de la UAB, E‐ Bellaterra, Spain.

The deposition of SiC thin film was performed by PLD, whose experimental setup is similar to that reported elsewhere. Fig. 1 shows the pictorial view of the PLD deposition system and the Nd 3+:YAG laser used for the SiC thin film deposition.A Q-switched Nd 3+:YAG (Quantel, BRILB IR) laser with a repetition rate of 10 Hz and a pulse width of 10 ns was used.

BiFeO 3 (BFO) thin films were prepared on Pt()/TiO 2 Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition book 2 /Si() substrates by the pulsed-laser deposition (PLD) technique at a low temperature of °C.

The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO.

The pulsed KrF excimer laser ablation was applied for the preparation of thin metallic alloys. Above an ablation threshold of about 5 J/cm 2, an explosive evaporation of the target material occurs leading to high deposition rates of up to 3 nm/s and a stoichiometry transfer between the target and the deposited film.

The surfaces of the grown amorphous and polycrystalline films are smooth. LiFePO4 thin films grown by pulsed laser deposition: Effect of the substrate on the film structure and morphology.

Applied Surface Science(8),   Laser beam evaporation (pulsed-laser deposition) Pulsed-laser deposition (PLD) is another physical deposition technique to deposit the thin-film-coating system. During the thin-film deposition process, the laser beam is used to ablate the material for depositing the thin films inside a vacuum chamber as shown in Figure 3.

The pulsed laser deposition (PLD) was employed for the preparation of nano-structured titanium dioxide (TiO2) thin films because of its advantage for materials with high melting point. The basic mechanisms of pulsed laser ablation in liquids (PLAL) as a method for the synthesis of nanoparticles (NPs) were considered.

Physical and chemical processes occurring during the PLAL that determine the formation, composition and structure of the nanoparticles obtained are described. The influence of the composition and properties of the target material, the solvent and the.

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Pulsed-laser deposition (PLD) (Eason, ) is a relatively new physical vapour deposition technique, which has nevertheless been used for deposition of a vast range of materials including CHG thin PLD, laser pulses of high-energy density are focused onto a target, the material of which is vaporized after the laser power reaches the ablation threshold and forms a plasma plume.

This work studies the deposition of epitaxial MgO thin films with thickness of 40 nm deposited on bare Si () wafer using pulsed laser deposition (PLD), which can serve as a buffer layer for subsequent growth of textured Y-BaZrO 3 with high proton-conductivity. The success of epitaxial deposition were achieved by careful preparation of Si substrate by pre-etching with HF solution, as.

Pulsed laser deposition (PLD) is another fast method, and often used in laboratories. 11–13 With source scan or substrate rotation, 11, 15, 20, 21 uniform films of up to three inches can be deposited.

Sputtering is an old method in YBCO thin film preparation when. We report the use of YAG:Ce phosphor as the raw material to make thin and transparent phosphor films with pulsed laser deposition including the effects of heating temperature, target–substrate distances, annealing times, and annealing atmosphere on the YAG:Ce 3+ phosphor film crystal types and spectral properties.

The results indicated that at a coating temperature of °C, the YAG:Ce 3. "Preparation of Thin Films provides a comprehensive account of various deposition techniques for the preparation of thin films of elements, compounds, alloys, ceramics, and semiconductors - emphasizing inorganic compound thin films and discussing high vacuum and chemical deposition methods used for preparing high temperature superconducting oxide thin films.5/5(2).

Pulsed LASER deposition (PLD) is widely recognized as excellent deposition technique owing to stoichiometric transfer of target material, easy preparation and high quality.

Thin films from few nanometers to micrometer regime can be fabricated with equal ease. Although a batch process is not suitable for mass scale industrial production, PLD.

Pulsed laser deposition (PLD) is widely used to prepare various kinds of thin films.

Description Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition FB2

From many experimental results the film surface has been found to be strongly affected by so-called droplets, which are relatively large target material particles in solid or liquid state carried with the order to satisfy both purposes of high deposition rate and good quality by the PLD, we have.

The a-Si thin film anode with a thickness of nm showed stable cycling behavior between and V for 50 cycles with a small capacity fade rate of about % per cycle. The apparent diffusion coefficient calculated from CVs was about 10 −13 cm 2 /s.

The a-Si thin film anode was also successfully be coupled with the LiCoO 2 thin film. Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates.

All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = nm, τ FWHM ≈ 25 ns). Half of the samples were post-deposition thermally. It was thought that Si could hardly dissolve in CrN, but Suzuki et al. succeeded in preparing a (Cr,Si)N thin film in which Si was dissolved, through epitaxial growth on a MgO substrate by pulsed laser deposition (PLD).

The (Cr,Si)N thin film was epitaxially grown at a Si content of 10 mol% or less, and showed a maximum hardness of 51 GPa at a.

Details Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition FB2

Nb-doped SrSnO3 (SSNO) thin films were epitaxially grown on LaAlO3() single-crystal substrates using pulsed laser deposition under various oxygen pressures and substrate temperatures.

The crystalline structure, electrical, and optical properties of the films were investigated in detail.

X-ray diffraction results show that the cell volume of the films reduces gradually with increasing. SrRuO 3 thin films are grown under reduced oxygen pressures between Torr and mTorr by pulsed laser deposition.

The thin films grown at temperatures above ° C and at a pressure of Torr are characterized in terms of the lattice shrinkage due to oxygen deficiency. The resistivity increases and the temperature dependence changes to semiconductive from metallic as the.

The developments and progress in thin film growth of these materials in the past 10 years are reviewed with a focus on the two main deposition techniques used so far for FBS (pulsed laser deposition, and molecular beam epitaxy).

Epitaxial strontium ruthenate SrRuO 3, Sr 3 Ru 2 O 7, and Sr 2 RuO 4 thin films were grown on () SrTiO 3 substrates by pulsed laser deposition (PLD). The composition of the film was found to be widely controllable by changing the ablation conditions, oxygen pressure, and growth temperature, and thus, SrRuO 3, Sr 3 Ru 2 O 7, and Sr 2 RuO 4.

Preparation and Characterization of Cu-Zn Nano-Structural Ferrite Thin Films Produced by Pulsed Laser Deposition (PLD) Abdul Gaffoor, Dachepalli Ravinder DOI: /wjcmp 3, Downloads 6, Views Citations.

Applications of Laser Ablation - Thin Film Deposition, Nanomaterial Synthesis and Surface Modification. Edited by: Dongfang Yang. ISBNeISBNPDF ISBNPublished The preparation of epitaxial potassium‐tantalate‐niobate (KTaNbO3, KTN) films on strontium‐titanate substrates by means of pulsed excimer laser evaporation in.

The crystalline quality and composition of the perovskite layer play the key role in the efficiency of solar cells. Among the various film deposition techniques, pulsed laser deposition has the distinctive advantages of preparation of thin films of high crystalline quality and close duplication of the composition of the targets.

Search the information of the editorial board members by name. Investigating the Thermal Stress of Millisecond Pulsed Laser Irradiation on Charge-Coupled Devices. Chunxu Jiang, Yong Tan, Bo Peng, Guangyong Jin, Hongxing Cai, Zhong Lv. Journal of Applied Mathematics and Physics Vol.8 No,Novem DOI: /jamp 2 Downloads 12 Views.

By pulsed laser deposition, we obtained single-phased, c-axis oriented epitaxial films. The films show a T c,onset of K and a T c,0 of K with x = The upper critical field is estimated to be T.

The thin films of n-ZnO/p-NiO were grown by pulse laser deposition (PLD) technique on 5×5 mm 2 n-type silicon wafer. NiO and ZnO targets were used for the formation of NiO and ZnO layers and at the time of deposition the energy and pulse rate of laser .